Answers are grounded in this paper and cite their sources.
Flat-surfaced and fully (111)-oriented Cu2O films were grown through a chelate-assisted electrochemical approach. Based on key roles of chelating agent, the flat surface of films controlled over the columnar-grained growth was obtainable with a root-mean-square roughness value below 3 nm. Cu2O films treated by a rapid-thermal-annealing process at 200 °C exhibited unipolar switching I-V characteristics, presenting the bistable resistance states with a high resistance ratio (Roff/Ron) over 3 orders of magnitude and considerably stable switching properties within 100 switching cycles.
No takes yet. Share an insight, caveat, or question.
Kang et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: