The activation energy for nickel-induced lateral crystallization of amorphous silicon heated in an inert atmosphere was investigated, and was found to be 1.75 eV for rapid thermal annealing and 1.86 eV for furnace annealing. Polycrystalline silicon thin-film transistors fabricated in furnace recrystallized and rapid thermal recrystallized material had similar device characteristics, even though the crystallization velocity differed by a factor of 3.
No takes yet. Share an insight, caveat, or question.
Lam et al. (1999) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: