Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

In this work, effect of uniaxial stress is studied by wafer bending on p/n-channel candidates for III-V based complimentary logic. p-GaSb has 2× higher piezoresistance (π) coefficient than p-In0.53Ga0.47As, which combined with high hole-mobility in GaSb makes it an attractive candidate for III-V p-metal-oxide-semiconductor-field-effect-transistor. Limitation on maximum stress introduced by wafer bending is improved when the III-V channel is grown epitaxially on silicon. 250 MPa of stress is achieved by wafer bending on III-V channel grown on silicon substrate, which is 5× higher than maximum stress achieved on III-V substrate.