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The influence of various effects inherent to the high-energy ion bombardment of crystals on the latent track formation is treated. The nature of tracks is dependent on a type of solids. The relaxation of strong electron excitation which occurs under irradiation of materials by energetic ions is the main parameter which defines the nature of track regions. The track migration of implanted atoms as well as track channeling of incident ions is discussed for ion implantation in semiconductors.
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Ф. Ф. Комаров (1996) studied this question.
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