The effect of annealing and hydrogenation on the dislocation conduction in silicon

The effect of annealing on the high-frequency conductivity of plastically deformed silicon is studied. It is shown that after annealing the dislocation conduction in p-type samples disappears. This correlates with the disappearance of the EPR signal from dislocations and of some peaks in the DLTS spectra. The hydrogenation of samples gives rise to dislocation conduction which hypothetically is due to the one-dimensional bands caused by the deformation potential. Their depths are evaluated as Ec − 0.08 eV and Ev + 0.06 eV. The negative magnetoresistance observed at temperatures above 35 K is analyzed.