This study, investigates the influence of the Cs concentration on the formation of MCs + ions (SiCs + and Cs 2 + ) in a Si wafer. The Cs concentration was varied by: Studying the surface transition period in a Si wafer under Cs + bombardment. Profiling a Cs‐implanted Si sample. Investigating different Cs + bombarding conditions which generate different Cs concentrations in silicon under a steady‐state regime. The results support the recombination model for the formation of the MCs + ions. From this model, a quantitative evaluation of the ionization probability of Cs 0 was obtained.
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Marie et al. (1995) studied this question.
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