We have studied the static-mode ion-beam sputtering of Si⁺ from a Si (100) surface during oxidation and nitridation. The data are consistent with the ionization of sputtered atoms resulting from the breaking of the local chemical bond during sputtering. A model is proposed to explain the dependences of the ionization probability of the ionization potential, emission energy, and isotopic mass.
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Yu et al. (1986) studied this question.
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