Characterization of individual interface traps with charge pumping

Charge pumping (CP) of individual interface traps has been studied in small field effect transistors. The amplitude of the CP current is found to be quantized in units of qf, where f is the frequency of the applied CP wave form, and each unit represents the response of a single trap. The time dependence for emission of a trapped electron from a single interface trap has also been measured with CP. The emission probability is found to increase exponentially with time, consistent with Shockley–Read–Hall statistics. We also compare the relative merits of random telegraph noise experiments and CP for characterizing individual interface traps.