Electric-Field-Tunable Spin Polarization and Carrier-Transport Anisotropy in an A-Type Antiferromagnetic van der Waals Bilayer

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Two-dimensional (2D) magnetic semiconductor materials with the electric-field-tunable spin polarization and carrier-transport anisotropy are of great significance for the fundamental physics and device application. Here we propose a general strategy to tune the spin polarization and anisotropic effective mass in a 2D A-type antiferromagnetic (AFM) bilayer system. We take the A-type AFM bilayer CrSBr (with the intralayer ferromagnetic and interlayer AFM coupling) as an example to confirm this design principle. Firstly, a vertical electric field can lift the spin degeneracy in the A-type AFM bilayer CrSBr. By flipping the direction of electric field, the spin polarization direction can be reversed. Secondly, in the A-type AFM bilayer CrSBr with an interlayer twist angle of 90^∘{}, both the spin direction and the carrier-transport anisotropy can be tuned simultaneously by applying a vertical electric field due to the in-plane anisotropic carrier effective mass in each CrSBr monolayer. This opens an opportunity for controlling the spin polarization as well as carrier-transport anisotropy in the 2D magnetic van der Waals layered materials by interlayer twist and electric field, and provides an idea for utilizing A-type AFM semiconductors to design spintronic devices.