The self-trapped-exciton recombination-luminescence technique is used to measure the three-photon-absorption cross section in KI at 532 nm. The simultaneously measured {π} and {σ} luminescence provides a stringent test of the intrinsic single-shot damage process considered to be the nonlinear absorption of light by three-photon-generated free carriers.
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Kelly et al. (1990) studied this question.
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