The absorption coefficient for intensive electromagnetic radiation is calculated for different scattering mechanisms in semiconductors: ionized impurities, polar and nonpolar optical interaction, deformation and piezoelectric interaction with acoustic phonons — at any temperature using the path‐integral method. The dependence on the intensity of partial multiphoton absorption coefficients as well as that of the total coefficient is investigated. In the cases of low and high temperatures the dependence of the absorption nonlinearity form on the scattering mechanism is studied. The possibility isrevealed to identify the dominant scattering mechanism on the base of experimental data on the nonlinearity of absorption.
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Pokatilov et al. (1976) studied this question.
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