We have studied the dependence of magnetic properties on the carrier concentration of IV–VI diluted magnetic semiconductor Ge1−xMnxTe prepared by ionized-cluster beam technique. With increasing carrier concentration, the magnetic properties drastically change; saturation magnetization increases and coercive field decreases in hysteresis loop, and the Curie temperature increases. These results obviously show carrier-enhanced ferromagnetic order. The similar effect is also observed in magnetoresistance behavior.
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Fukuma et al. (2002) studied this question.
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