Solid–Solution Semiconductor Nanowires in Pseudobinary Systems

Pseudobinary solid-solution semiconductor nanowires made of (GaP)(1-x)(ZnS)(x), (ZnS)(1-x)(GaP)(x) and (GaN)(1-x)(ZnO)(x) were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid-solution nanostructures. Electrical transport measurements on individual GaP and (GaP)(1-x)(ZnS)(x) nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.