It is now almost twenty-five years since the first Erbium-Doped Fiber Amplifier (EDFA) was demonstrated. Currently, the EDFA is one of the most important elements widely used in different kinds of fiber-optic communication systems. However, driven by a constantly increasing demand, the network traffic, growing exponentially over decades, will lead to the overload of these systems ("capacity crunch") because the operation of the EDFA is limited to a spectral region of 1530-1610 nm. It will require a search for new technologies and, in this respect, the development of optical amplifiers for new spectral regions can be a promising approach. Most of fiber-optic amplifiers are created using rare-earth-doped materials. As a result, wide bands in shorter (1150-1530 nm) and longer wavelength (1600-1750 nm) regions with respect to the gain band of Er-doped fibers are still uncovered. Here we report on the development of a novel fiber amplifier operating in a spectral region of 1640-1770 nm pumped by commercially available laser diodes at 1550 nm. This amplifier was realized using bismuth-doped high-germania silicate fibers fabricated by MCVD technique.
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Firstov et al. (2016) studied this question.
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