A defect model proposed to explain the effect of titanium doping on the rate of sintering of Al2O3 is revised to fit the oxidizing conditions of the experiments. The model accounts for the observed change in sintering rate by a change from rate limitation by ions to rate limitation by electrons, but requires the presence of an unusually large concentration of acceptor impurities in the material. Models similar to the ones originally proposed account for the rate of densification of Al2O3:Zr by hot-pressing in vacuo, provided it is extended by including electronics defects.
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F. A. Kröger (1984) studied this question.
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