The effect of A‐site substitution on the piezoelectric coefficient, high‐temperature dc resistivity, and thermal depoling behavior of Aurivillius phase CaBi 2 Nb 2 O 9 ferroelectric ceramics was investigated. Ceramics with the general formula of Ca 1− x M x Bi 2 Nb 2 O 9 , where M=Na, (Na,Ce), (Na,La), and La, were prepared by conventional solid‐state sintering. All the ceramics were single‐phase ferroelectrics with high Curie points (∼900°C). The doped ceramics, Ca 0.9 Na 0.1 Bi 2 Nb 2 O 9 , Ca 0.9 (NaLa) 0.1 Bi 2 Nb 2 O 9 , Ca 0.95 La 0.05 Bi 2 Nb 2 O 9 , and Ca 0.9 La 0.1 Bi 2 Nb 2 O 9 , had improved resistance to thermal depoling compared with Ca 2 Bi 2 Nb 2 O 9 and were stable up to 800°C. The donor dopants increased the dc electrical resistivity, while the acceptor dopants decreased it. The donor‐doped Ca 0.95 La 0.05 Bi 2 Nb 2 O 9 had a higher piezoelectric constant ( d 33 =12.8 pC/N) compared with CaBi 2 Nb 2 O 9 ( d 33 =5.8 pC/N), and its electrical resistivity was higher than 10 6 Ω·cm at 600°C. These properties suggest that doped CaBi 2 Nb 2 O 9 ceramics might be good candidates for high‐temperature piezoelectric applications.
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Zhang et al. (2008) studied this question.
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