Study of loss mechanisms on Sb2(S1−xSex)3 solar cell with n–i–p structure: Toward an efficiency promotion

In this work, a theoretical study on the impact of loss mechanisms on Sb2(S1−xSex)3 solar cells with a 10% certified world record efficiency is presented. In particular, it is found that CdS/Sb2(S1−xSex)3 interface recombination is the main loss mechanism, giving rise to a Voc deficit of almost 50% and a reduction in the efficiency of 45% compared to results obtained under the ideal radiative regimen. Under this mechanism, experimental observations, such as the J–V curve, efficiency, short-circuit current density, open-circuit voltage, fill factor, and external quantum efficiency, are reproduced. Finally, a discussion on the path to further promote device efficiency is presented and discussed.