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Since the very beginning of RF and microwave integrated techniques and energy harvesting, Schottky diodes are most often used in mixing and rectifying circuits. However, in specific μW power-harvesting applications, the Schottky diode technique fails to provide a satisfactory RF-dc conversion efficiency mainly because of its high zero-bias junction resistance. This paper examines the state-of-the-art low-power microwave-to-dc energy conversion techniques. A comprehensive picture of the state-of-the-art on this aspect is given graphically, which compares different technologies such as transistor, diode, and CMOS schemes. Subsequent to the highlighted limitations of current devices, this work introduces, for the first time, a nonlinear component for low-power rectification based on a recent discovery in spintronics, namely, the spindiode. Along with an analysis of the role of nonlinearity and zero bias resistance in the rectification process of the spindiode, it is shown how the spindiode could enhance the rectification efficiency even at a very low-power level and how this technique would shift the design paradigms of diode-based devices and circuits.
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Hemour et al. (2014) studied this question.
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