The increasing integration of microelectronics into the submicrometer region for VHSIC and VLSI applications necessitates the examination of these structures both for linewidth measurement and defect inspection by systems other than the optical microscope. The low beam-voltage scanning electron microscope has been recently employed in this work due to its po-tentiaIly high spatial resolution and large depth of field. This paper discusses applications of the scanning electron microscope to microelectron-ics inspection and metrology in light of the present instrument specifications and capabilities, and relates the scanning electron microscope to the controls required for submicrometer processing.
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Postek et al. (1987) studied this question.
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