Asymmetric Metal/α-In 2 Se 3 /Si Crossbar Ferroelectric Semiconductor Junction

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In 2 Se 3 /Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In 2 Se 3 c-FSJ is achieved with a high on/off ratio > 10 4 at room temperature, on/off ratio > 10 3 at an elevated temperature of 140 °C, retention > 10 4 s, and endurance > 10 6 cycles. The on/off ratio of the α-In 2 Se 3 asymmetric FSJs can be further enhanced to >10 8 by introducing a metal/α-In 2 Se 3 /insulator/metal structure.