Identification and ionization energies of the shallow donor metastable states in GaAs:Si

Transitions from the 1s0 ground state to the shallow donor metastable states in n-GaAs have been investigated at a temperature of T=4.2 K, magnetic fields up to 6 T, and for far-infrared transition energies between 50 and 300 cm−1. The final states of these transitions have been identified and characterized by high-field quantum numbers. The magnetic-field dependence of the ionization energies of some of these metastable states have been determined.