In this paper, we use Auger electron spectroscopy and electron energy-loss spectroscopy in order to investigate the room-temperature formation of the Ti/SiO2 interface and its reactivity upon annealing. We perform anneals in the temperature range 200–900 °C for which the phenomena involved are discussed with respect to the Si oxide and Ti film thicknesses.
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Wallart et al. (1991) studied this question.
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