Lateral-force microscopy and atomic-force microscopy were employed to investigate (110) cross sections of ZnSe-GaAs(001) and In_1-x{Ga}ₓ$P/GaAs(001) heterostructures, as well as ${Zn}_{1{{-}}x}CdₓSe/ZnSe multiple-quantum-well structures grown by molecular-beam epitaxy. Differences in the dynamic friction coefficient were successfully exploited to image interfaces in air with a lateral resolution better than 3--5 nm for all heterostructures.
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Bratina et al. (1995) studied this question.
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