Modeling and Design of Ferroelectric MOSFETs

A drain-current model has been developed for ferroelectric metal-oxide-semiconductor field-effect transistors by coupling Pao-Sah double integral with the nonlinear Landau description of the field and polarization of ferroelectric insulators. The resultant solution for surface potential ψsversus gate voltage Vgconsists of double hysteresis loops sensitive to the ferroelectric-insulator thickness. With a proper choice of the ferroelectric-film thickness, the hysteresis shape can be tailored for operating voltages below 0.5 V, e.g., at VDD= 0.25 V, with a drain-current slope steeper than the reciprocal of 60 mV/dec beyond the threshold voltage.