Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications

High-k titanium silicate (i.e., TiSiO4) thin films of various thicknesses (in the 4.5- to 160-nm range) were successfully deposited by means of a sputter deposition process at room-temperature and integrated into metal-insulator-metal (MIM) capacitors. It is shown that the TiSiO4-based capacitors can exhibit a capacitance density as high as 30 fF/mum2while maintaining low dielectric dispersion and losses. An excellent voltage linearity was also obtained ( alpha~600 ppm/V2at 8.2 fF/mum2) together with a high dielectric constant of 16.5 and low leakage current of about 10 nA/cm2at 1 MV/cm. Our results thus show that TiSiO4films constitute a very promising approach for the achievement of high performance MIM capacitors