B implants of 1keV, 1×1015at.cm−2 into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0s, 1050°C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.
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Kluth et al. (2004) studied this question.
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