Diffusion of indium markers at T=900 °C have been measured in undoped and Te-doped GaAs epilayers grown by organometallic vapor phase epitaxy. The diffusivity was found to be a linear function of electron concentration over the range n=2×1017–1.5×1019 cm−3. The results are consistent with the interdiffusion of AlAs–GaAs superlattices, and the diffusivities of In and Al in GaAs at 900 °C are found to be essentially identical within experimental noise. The results strongly suggest that group III interdiffusion in GaAs is controlled by a Ga vacancy with a charge of −1.
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Li et al. (1997) studied this question.
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