Answers are grounded in this paper and cite their sources.
Amorphous TaOx thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaOx/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta2O5 in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaOx film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaOx films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
No takes yet. Share an insight, caveat, or question.
Kurnia et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: