The thickness of thin natural oxide films formed on silicon, nickel, aluminium, iron, tantalum and zirconium has been measured using nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES) in combination with ion beam sputtering. It is shown that ion beam effects severely limit the use of AES and ion beam sputtering in measuring thin oxide thicknesses. Relatively non‐destructive techniques such as NRA or angle‐resolved x‐ray photoelectron spectroscopy (XPS) provide more reliable information.
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Tapping et al. (1988) studied this question.
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