The chemical bath deposition method was employed to prepare Ag 2 O films at specific preparation conditions. Silicon substrate with different conductivity was used to study their effect on the electrical and photovoltaic properties of the prepared devices. The current-voltage properties reveal that the ideality factor was (2.4 and 3.36) for psi and n-si substrate respectively. The obtained device efficiency is 0.35 while maximum detectivity was 0.3 cm.Hz 1/2 W -1 .
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Awayiz et al. (2020) studied this question.
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