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The internal interfaces of multilayer Al x Ga1−x As/AlAs nonlinear optical waveguides are investigated by high-angle annular-dark-field and energy-filtered scanning transmission electron microscopy, before and after partial wet oxidation of AlAs layers. Via a simple phenomenological model, the corresponding roughness parameters allow prediction of the scattering-induced waveguide optical losses, which are in reasonable agreement with the experimental value of 0.5 cm−1. We also find that Al x Ga1−x As layers adjacent to oxidized AlAs tend to be oxidized through the interfaces, even for low Al fraction, with typical oxidation depths of 9 nm for x = 0.7 and 2 nm for x = 0.
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Guillotel et al. (2010) studied this question.
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