The dependence of device characteristics on cavity length is used to determine the injection efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Estimates for the transparency carrier density are discussed in the context of recombination coefficients that have been reported for c-plane InGaN-based light-emitting devices.
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Farrell et al. (2011) studied this question.
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