Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.