Fabrication of ultra-flexible, ultra-thin organic field-effect transistors and circuits by a peeling-off method

We present a new and simple way of fabricating ultra-thin and flexible organic field-effect transistors and circuits by directly peeling them off from conventional SiO2 substrates. The devices show excellent flexibility up to a bending radius of 1 mm. Free-standing OFETs as thin as about 600 nm can also be made in this way. In addition, flexible complementary inverters with a gain of 100 can be fabricated by the peeling-off method.