A silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication processes, promising large-scale multifunctional photonic circuits. However, the centrosymmetric nature of SiN inhibits second-order nonlinear optical responses in its photonics platform, which is desirable for developing efficient nonlinear active devices. Here, we demonstrate high-efficiency second-order nonlinear processes in the SiN photonics platform by integrating a few-layer GaSe flake on a SiN microring resonator. With the pump of microwatt continuous-wave lasers, second-harmonic generation and sum-frequency generation with the conversion efficiencies of 849%/W and 123%/W, respectively, are achieved, which benefit from GaSe’s ultrahigh second-order nonlinear susceptibility, resonance-enhanced GaSe–light interaction, and phase-matching condition satisfied by the mode engineering. Combining with the easy integration, the GaSe-assisted high-efficiency second-order nonlinear processes offer a new route to enriching the already strong functionality of the SiN photonics platform in nonlinear optics.
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Wang et al. (2022) studied this question.
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