Polarization-dependent reflectivity from dielectric nanowires

The presence of GaN nanowires grown primarily normal to the surface of a sapphire substrate has a dramatic influence on the polarization dependence of laser light reflectivity at λ=1550-nm wavelength. Even at 12% substrate surface coverage, there is a factor of 2 enhancement in polarization dependence of reflectivity relative to bulk sapphire at values of incident angle greater than φ=72°.