The electrochemical properties of a metallosupramolecular network that undergoes reversible redox chemistry on indium-tin oxide (ITO)-coated glass substrates have been investigated. The redox-active osmium complexes are electrochemically accessible even for films with a thickness > 15 nm. The electrochemical data correlates well with our previously observed self-propagating growth process, for which the electron density for the assemblies remains constant during film growth. Electron-transfer rate constants obtained by potential step chronoamperometry experiments suggest an exceptionally low attenuation factor, β, of 0.013 ± 0.001 Å(-1). However, the intrinsically porous nature of the assembly could be to a large extent or even entirely responsible for such a low value.
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Motiei et al. (2010) studied this question.
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