Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

We report the effect of Mg doping on the growth kinetics of semipolar GaN(112¯2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(112¯2). We observe an enhancement of Mg incorporation in GaN(112¯2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.