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In this paper we investigate the optical effects of annealing under an oxygen atmosphere of Yb-doped Y 2 SiO 5 thin films grown by liquid phase epitaxy. Infrared transmission, particularly adapted to thin film characterizations by means of Yb 3+ crystal field excitations, is used to single out the effects of annealing. For instance, absorption intensities increase by ∼10% and disorder in Yb 3+ substitution is reduced. Micro-Raman backscattering measurements detect no particular defects in as-grown and annealed thin films.
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Denoyer et al. (2007) studied this question.
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