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We report the successful fabrication of a new silicon photomultiplier (SiPM) with the highest fill factor achieved to date. By utilizing a novel trench structure, a SiPM of 0.5 × 0.5 mm 2 was designed and fabricated. The device consisted of 1024 micropixels, and a 70% fill factor was achieved for each of the 15 × 15 µm 2 micropixels. The fabricated SiPM showed the desired characteristics for a fast photomultiplying device, namely, a rise time of ∼2 ns, a gain of 1 × 10 5 –5 × 10 5 , and a photon detection efficiency of ∼10% at the 470 nm wavelength. The details of the design, fabrication, and performance characteristics are presented together with the implications for the future development of SiPM-based imaging sensors.
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Lee et al. (2015) studied this question.
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