Using epitaxial lift-off by selective wet-chemical etching, we have transferred an InP/GalnAs photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Our technique has promising applications in highperformance optoelectronic circuits for fibre-optic communications systems combining device from different material systems.
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Schumacher et al. (1989) studied this question.
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