Deliberate halide exchange between unstable intermediate HPbI2Br and nonstoichiometric FAI is employed to produce high-quality FAPbI3–xBrx (x ≈ 0.44), which eliminates the use of antisolvent dripping and other post-treatment techniques. The obtained perovskite thin film demonstrates high crystallinity and a large and compact crystal domain up to 2–3 µm. The corresponding device shows power conversion efficiency of up to around 19.0%, with reliable stability and reproducibility.
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Long et al. (2017) studied this question.
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