A metal–semiconductor–metal photoconductive detector has been fabricated from porous silicon. To that aim low conductive p‐type Si (20 Ω cm) has been porosified and several rapid‐thermal treatment steps applied before deposition of Al‐contacts. The photo response was investigated in the wavelength range of 350–800 nm. A responsivity of up to 4 A/W was observed at 600 nm which is about 13 times higher than that of a commercial photodiode. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Rossi et al. (2005) studied this question.
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