Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1999Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties

Analysis of misfit relaxation in heteroepitaxial BaTiO3thin films

View Full Paper
Ask AI
Bookmark
Share

Authors

TSToshimasa SuzukiYNYuji NishiMFMasayuki Fujimoto

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Suzuki et al. (1999) studied this question.

synapsesocial.com/papers/6a98749a3041a2fcadad8dafhttps://doi.org/10.1080/01418619908214294
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1On the Stresses and Energies associated with Inter-Crystalline Boundaries1950 · 208 citations
  2. 2Dislocations in BaTiO3 ceramics1988 · 41 citations
  3. 3Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. II. Experimental verification and implications1994 · 224 citations
  4. 4Improvement of 〈indium-tin-oxide/silicon oxide/n-Si〉 junction solar cell characteristics by cyanide treatment1997 · 47 citations
  5. 5Defects associated with the accommodation of misfit between crystals1975 · 701 citations