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We investigated the tunneling magnetoresistance change in magnetic tunnel junctions in the presence of external microwaves. The changing relative angle between the free layer and the pinned layer results in a rectification of the average resistance change. Due to its miniature size and its sensitivity to the microwave magnetic field, the magnetic tunnel junction could be utilized as a microwave power sensor with the ability to detect microwave frequencies. Studying microwave power and bias current dependencies reveals desired sensor features with linear responses and enhanced signal levels.
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Fan et al. (2009) studied this question.
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