Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method

It was shown thermodynamically and experimentally that AlAs could be grown by the chloride transport method. The driving force was obtained in all temperature ranges analyzed (650°–850°C). In the experiments, Al was supplied as an organometallic compound, i.e. , Al ( CH 3 ) 2 Cl ‒ ( DMAC ) or Al ( CH 3 ) 3 ‒ ( TMA ) with a carrier gas of He, and arsenic was supplied by AsCl 3 / ( He + 1 % H 2 ) instead of AsH 3 . DMAC or TMA is mixed with AsCl 3 to produce aluminum chloride at the source zone, and ( AlCl + AlCl 3 ) and As 4 are transported to the deposition zone. AlAs was deposited by introducing H 2 into the deposition zone, whose temperature is the same as that of the source zone (700°–800°C). Only when the AsCl 3 / ( DMAC or TMA ) ratio was in a proper range was the AlAs growth obtained.