Reaction Mechanism of GaAs Vapor‐Phase Epitaxy

Reaction mechanisms of epitaxial growth using and systems have been investigated by means of infrared spectroscopy, and probable reaction models are discussed. Over the whole temperature range of , dominant gallium chlorides observed by a sampling method are and an unidentified gallium compound with chlorine that has an absorption band at 1600 cm −1 in the hydrogen carrier system, but only in the nitrogen carrier system. Analyses by a mechanical balance have suggested that sampled from a reactor should dimerize into the greater part of in a gas cell. A photoenhancement of reduction by has been examined by irradiating with an excimer laser. A photoexcitation of has been ascertained, and epitaxial growth with a single flat temperature profile has been realized at low temperatures below 600°C by irradiation with a 249 nm laser.