On the measurement of barrier height in metal-insulator-semiconductor (GaAs) structures by internal photoemission technique

It is shown that photoexcitation of interface states which causes nonlinearity in the Fowler plot for Au-thin oxide-(n)GaAs structures can be reduced by the use of a thicker (∼500 Å) Au electrode. The linearity in the Fowler plot extends over a wider range of photon energy using this scheme and this allows accurate determination of barrier height.