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Hexamethyldisiloxane was used to deposit silicon dioxide thin films using a low frequency plasma reactor at low pressure as well as a dielectric barrier discharge (DBD) at atmospheric pressure. FT-IR, XPS, EIS, SEM and ellipsometry were used to analyse the samples. The results show that, at low pressure, the deposited films which are smooth, continuous and dense present a polymer-like structure. By carrying out the film deposition after an oxygen plasma pretreatment step, a further improvement in the protective properties is achieved, which is observed in the case of SiOχ coatings with 13.56 MHz RF generators.1 At atmospheric pressure, the deposited films present an inorganic character deposited in open air and a polymer-like one deposited under a controlled nitrogen atmosphere in our DBD reactor. The latter also allows continuous films which present the best anti-corrosive properties (which have been studied for the first time for anti-corrosive properties) when they contain some carbon incorporated.
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Petit-Étienne et al. (2007) studied this question.
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