onHigh-peak-power strain-compensated GaInAs/AlInAs quantum cascade lasers (λ∼4.6 μm) based on a slightly diagonal active region design

Employing a “slightly diagonal” active region design for the quantum cascade lasers compared to a reference sample based on the conventional vertical transition design [R. Köhler et al., Appl. Phys. Lett. 76, 1092 (2000)], we have improved the maximum operation temperature, room-temperature maximum peak power per facet, and room-temperature slope efficiency from 320 K, 200 mW, and 570 mW/A to higher than 360 K, 3.2 W, and 2200 mW/A, respectively, for the device size of 16 μm×3 mm with as-cleaved facets operated in pulsed mode.